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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW898 UHF linear power transistor
Product specification Supersedes data of 1995 Oct 04 1996 Jul 16
Philips Semiconductors
Product specification
UHF linear power transistor
FEATURES * Internal input matching for wideband operation and high power gain * Polysilicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATION * Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. DESCRIPTION NPN silicon planar transistor in a SOT171A 6-lead rectangular flange package, with a ceramic cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of 25 V. PINNING SOT171A PIN 1 2 3 4 5 6 emitter emitter base collector emitter emitter
BLW898
DESCRIPTION
handbook, halfpage
246
c b
135 Top view
MAM141
e
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW class-A Note 1. Three-tone test signal (-8, -16, and -10 dB); dim = -63 dB. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. f (MHz) 860 VCE (V) 25 ICQ (A) 1.1 Po sync (W) 3(1) Gp (dB) 9(1)
1996 Jul 16
2
Philips Semiconductors
Product specification
UHF linear power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature up to Tmb = 70 C CONDITIONS open emitter open base open collector - - - - - - -65 - MIN.
BLW898
MAX. 60 28 2.5 3.7 3.7 44 +150 200 V V V A A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Ptot = 44 W; Tmb = 70 C VALUE 3 0.3 UNIT K/W K/W
handbook, halfpage
120
MGD531
Ptot (W)
80
(2)
(1)
40
0 0 40 80 120 Tmb C 160
(1) Continuous operation (2) Short-time operation during mismatch.
Fig.2
Power derating curve.
1996 Jul 16
3
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current DC current gain collector capacitance feedback capacitance CONDITIONS IC = 15 mA; IE = 0 IC = 30 mA; IB = 0 IE = 0.6 mA; IC = 0 VBE = 0; VCB = 28 V VCE = 20 V VCE = 25 V; IC = 1.1 A VCB = 25 V; IE = ie = 0; f = 1 MHz MIN. 60 28 2.5 - - 30 - TYP. - - - - - - 18 11
BLW898
MAX. - - - 1.5 3 140 - -
UNIT V V V mA mA pF pF
VCB = 25 V; IC = 0; f = 1 MHz -
MGD532
handbook, halfpage
160
handbook, halfpage
60
MGD533
hFE 120
Cc (pF)
40
80
20 40
0 0 1 2 IC (A) 3
0 0 10 20 30 VCB (V) 40
VCE = 25 V; tp = 500 s; = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1996 Jul 16
4
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter class-A test circuit. MODE OF OPERATION CW class-A CW class-A Notes f (MHz) 860 860 VCE (V) 25 25 ICQ (A) 1.1 1.1 Po sync (W) 3(1) 3(2) Gp (dB) 9(1) 9(2)
BLW898
dim (dB) <-63(1) <-60(2)
1. Three-tone test method (vision carrier -8 dB, sound carrier -10 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. 2. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), 0 dB corresponds to peak sync level. Ruggedness in class-A operation The BLW898 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases, under the conditions: VCE = 25 V; ICQ = 1.1 A; Th = 25 C; f = 860 MHz; Po sync = 3 W.
MGD534
handbook, halfpage
30
handbook, halfpage
12
MGD535
Po sync (W)
(1)
Gp (dB)
(2)
(1) (2)
20
8
10
4
0 0 1 2 3 4 Pi sync (W)
0 0 10 20 Po sync (W) VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C. 30
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
Fig.5
Output power as a function of input power; typical values.
Fig.6
Power gain as a function of output power; typical values.
1996 Jul 16
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
handbook, halfpage
-10
MGD536
handbook, halfpage
-40
MGD537
dim (dB) -30
(1) (2)
dim (dB) -50
-50
-60
(1) (2)
-70 0 10 20 Po sync (W) 30
-70 0 0.4 0.8 1.2 IC (A) VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; Po sync = 3 W; (3-tone; -8/-16/-10 dB). (1) Th = 70 C. (2) Th = 25 C. 1.6
VCE = 25 V; ICQ = 1.1 A; f = 860 MHz; (3-tone; -8/-16/-10 dB). (1) Th = 25 C. (2) Th = 70 C.
Fig.7
Intermodulation distortion as a function of output power; typical values.
Fig.8
Intermodulation distortion as a function of collector current; typical values.
handbook, full pagewidth
+VBB C4 C5
R2
input 50
C1
,,,,,, ,,,,,,
L1 L2 L3 L4 L5 C2 C3
L6
DUT
,,,,,, , ,,,,,, ,,,,,, ,,,,,, ,,,,,,
L12 R1 C9 C10 L11 C6 C7 L9 L10 L7 L8 C8
+VCC C11 C12
C13
output 50
MGD538
Fig.9 Class-A test circuit at 860 MHz.
1996 Jul 16
6
Philips Semiconductors
Product specification
UHF linear power transistor
BLW898
handbook, full pagewidth
160 77 77
69
+VBB
+VCC
R2 C10 C5 C4 L11 C9 L6 C1 L1 C2 L4 & L5 L2 & L3 C3 L9 C6 L7 & L8 C7 C8 L10 R1 L12
C12
C11
C13
MGD539
Dimensions in mm.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1996 Jul 16
7
Philips Semiconductors
Product specification
UHF linear power transistor
List of components COMPONENT C1 C2, C8 C3 C4, C12 C5 C6 C7 C9 C10 C11 C13 L1 L2 L3 L4, L5 L6 L7 L8 L9 L10 L11 L12 R1 R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 Tekelec Giga trim 37271 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor solid aluminium capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 solid aluminium capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 RF choke stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 grade 4S2 ferroxcube wideband RF choke metal film resistor metal film resistor 50 ; 0.6 W 10 ; 0.6 W VALUE 8.2 pF 0.6 to 4.5 pF 15 pF 10 nF; 63 V 10 F; 63 V 10 pF 2.4 pF 500 pF 47 F; 63 V 330 pF 5.1 pF 50 50 40 40 220 nH 40 40 50 50 40 9 x 3.25 mm 3.5 x 3.25 mm 9 x 2.3 mm 48.5 x 2.3 mm 41.5 x 3.25 mm 50 x 2.3 mm 10 x 2.3 mm 2 x 3.25 mm 4 x 3.25 mm DIMENSIONS
BLW898
CATALOGUE No.
2222 592 16627 2222 030 38109
2222 031 38479
4330 030 36301 2322 156 14999 2322 156 11009
3. The striplines are on a double copper-clad PCB with PTFE fibre-glass dielectric (r = 2.2); thickness 0.79 mm.
1996 Jul 16
8
Philips Semiconductors
Product specification
UHF linear power transistor
Table 1 f (MHZ) 470 495 520 545 570 595 620 645 670 695 720 745 770 795 820 845 860 Common emitter scattering parameter, ICQ = 1.1 A; VCE = 25 V. S11 MAG. (RAT) 0.962 0.961 0.959 0.958 0.957 0.955 0.953 0.951 0.950 0.947 0.943 0.942 0.941 0.938 0.935 0.933 0.932 ANG. (DEG) 176.1 175.9 175.7 175.5 175.3 175.0 174.8 174.5 174.2 173.9 173.7 173.4 173.1 172.8 172.5 172.1 171.9 MAG. (RAT) 1.002 0.961 0.923 0.891 0.861 0.835 0.815 0.795 0.775 0.757 0.744 0.732 0.724 0.716 0.707 0.701 0.700 S21 ANG. (DEG) 68.3 66.9 65.7 64.4 63.2 62.0 61.0 59.7 58.6 57.7 56.6 55.4 54.4 53.3 51.8 50.9 50.2 MAG. (RAT) 0.017 0.017 0.017 0.018 0.018 0.018 0.019 0.019 0.019 0.020 0.021 0.021 0.021 0.021 0.022 0.021 0.022 S12 ANG. (DEG) 32.6 32.8 33.6 34.9 35.8 36.1 36.8 37.3 37.4 37.8 38.5 38.6 39.8 40.1 39.1 39.3 39.4 MAG. (ANG) 0.802 0.803 0.804 0.803 0.804 0.805 0.804 0.805 0.807 0.806 0.805 0.807 0.808 0.807 0.808 0.810 0.809 S22
BLW898
ANG. (DEG) -178.2 -178.2 -178.2 -178.3 -178.2 -178.2 -178.2 -178.1 -178.0 -178.0 -178.1 -177.9 -177.8 -177.8 -177.8 -177.6 -177.5
GUM (dB) 15.7 15.2 14.7 14.3 14.0 13.5 13.0 12.7 12.5 12.0 11.5 11.3 11.1 10.8 10.6 10.4 10.3
1996 Jul 16
9
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE
BLW898
handbook, full pagewidth
11.5 10.5 5.85 2.25 min
1 (2x) 1 3.25 9.15 2.85 3 5 2.25 1.85 (2x) 2 4 6 25.2 max 18.42 9.3 max
3.45 (2x) 3.15
2.8
4.50 4.05 7.0 max 0.14
MBC828 - 1
6 max
Dimensions in mm.
Fig.11 SOT171A.
1996 Jul 16
10
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW898
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Jul 16
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com/ps/ (1) BLW898_2 June 26, 1996 11:51 am SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands
127041/1200/02/pp12 Date of release: 1996 Jul 16 Document order number: 9397 750 00966

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